| PART |
Description |
Maker |
| SIR-94T530 |
Infrared emittng dode
|
SEOUL[Seoul Semiconductor]
|
| OP290 OP290A OP290B OP290C OP291A OP291B OP291C OP |
4.95 mm, 1 ELEMENT, INFRARED LED, 890 nm
Plastic Infrared Emitting Diode
|
OPTEK TECHNOLOGY INC
OPTEK Technologies
|
| QEC113 QEC112 |
GAAS INFRARED EMITTING DIODE 2.9 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
QT[QT Optoelectronics]
|
| CQX15 |
GaAs INFRARED EMITTING DIODE 4.67 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Fairchild Semiconductor, Corp.
|
| LN59L |
GaAs Bi-directional Infrared Light Emitting Diodes 2.5 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Panasonic, Corp.
|
| MTE100 MTE1100 |
GaAs INFRARED EMITTER INFRARED LED FOR PHOTO SENSOR
|
Marktech Optoelectronics
MARKTECH[Marktech Corporate]
|
| TLN11907 TLN119F TLN119 |
Infrared LED GaAs Infrared Emitter
|
Toshiba Semiconductor
|
| TLN11007 TLN110F |
INFRARED LED GAAS INFRARED EMITTER
|
Toshiba Semiconductor
|
| TLN115A07 TLN115AF TLN115A |
Infrared LED GaAs Infrared Emitter
|
Toshiba Semiconductor
|
| MIE-324H4 324H4 |
GaAlAs T-1 PACKAGE INFRARED EMITTING DIODE 发动器的T 1包红外发光二极管
Infrared Emitting Diodes (IRED) 红外发光二极管（登记合格决定
|
Unity Opto Technology Co., Ltd.
Vishay Intertechnology, Inc.
UOT[Unity Opto Technology]
|
| MIE-534H4 534H4 |
GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE 大功率的GaAIAs的T 1 3 / 4包装红外发光二极
Infrared Emitting Diodes (IRED)
|
Unity Opto Technology Co., Ltd.
UOT[Unity Opto Technology]
|
| MIE-514A4 514A4 |
Infrared Emitting Diodes (IRED)
AlGaAs/GaAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
